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Zhurnal Tekhnicheskoi Fiziki, 2008 Volume 78, Issue 1, Pages 126–128 (Mi jtf10039)

Brief Communications

Simulation of contact stiffness of a hemispherical island inclusion

G. S. Batog, A. S. Baturin, E. P. Sheshin

Moscow Institute of Physics and Technology (State University), Dolgoprudny, Moscow region

Abstract: Numerical analysis is carried out for constructing a model simulating the contact stiffness of a solitary hemispherical island inclusion in an infinitely extended substrate. The contact stiffness is measured using atomic force acoustic microscopy with tips having a constant contact radius. Finite element analysis using the isotropic model of the materials is employed for this purpose. The model can be used for studying nanocomposite materials.

Received: 18.01.2007


 English version:
Technical Physics, 2008, 53:1, 122–124

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© Steklov Math. Inst. of RAS, 2026