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Zhurnal Tekhnicheskoi Fiziki, 1986 Volume 56, Issue 3, Pages 571–572 (Mi jtf101)
Brief Communications

ELECTROGRAPHIC EFFECT IN SILICON-NITRIDE

D. G. Esaev, S. P. Sinitsa

Institute of Semiconductor Physics of USSR Academy of Sciences, Siberian Branch, Novosibirsk

Received: 29.06.1984
Revised: 07.05.1985



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