Photosensitivity of surface-barrier and point structures on Cd$_{1-x}$Mn$_x$Te single crystals

Two new types of photosensitive structures are proposed and fabricated for the first time on solid-solution single crystals of diamondlike Cd$_{1-x}$Mn$_x$Te ($x$ = 0–0.7) magnetic semiconductors. The photoelectric properties of surface-barrier (In/Cd$_{1-x}$Mn$_x$Te) and welded (weld/Cd$_{1-x}$Mn$_x$Te) structures are studied at $T$ = 300 K. The photosensitivity spectra of these structures are analyzed and compared; as a result, the character of the interband optical transitions and the energy gaps of the Cd$_{1-x}$Mn$_x$Te crystals are determined. These structures can be applied in magnetic photoelectronic devices.