T. A. Laperashvili, G. A. Nakashidze, “DEPENDENCE OF SCHOTTKY-BARRIER FORMATION HEIGHTS WITH SEMICONDUCTORS BASED ON GAP ON THE METAL PENETRATION”, Zhurnal Tekhnicheskoi Fiziki, 1985, Volume 55, Issue 4,Pages <nobr>733

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Zhurnal Tekhnicheskoi Fiziki, 1985 Volume 55, Issue 4, Pages 733–734 (Mi jtf1193)

Brief Communications

DEPENDENCE OF SCHOTTKY-BARRIER FORMATION HEIGHTS WITH SEMICONDUCTORS BASED ON GAP ON THE METAL PENETRATION

T. A. Laperashvili, G. A. Nakashidze

Ilia State University, Tbilisi

UDC: 537.311.33

Received: 11.12.1983

Fulltext: PDF file (261 kB)

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