MEASUREMENT OF THE LOCAL THICKNESS OF CRYSTALS AND OBTAINING PROFILES OF DEFECT DISTRIBUTION ON DEGREES IN ION-ALLOYED SILICON LAYERS BY THE ELECTRON-MICROSCOPY METHOD

P. V. Petrashen, A. A. Sitnikova, L. M. Sorokin

Ioffe Physico-Technical Institute USSR Academy of Sciences, Leningrad

Received: 04.03.1983

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