I. A. Bachilo, R. V. Gribkovskii, F. F. Komarov, V. A. Mironenko, A. P. Novikov, “FORMATION OF BETA-SI3N4 HIDDEN LAYER UNDER HIGHLY EFFICIENT ION IRRADIATION (HII) OF SILICONE”, Zhurnal Tekhnicheskoi Fiziki, 1989, Volume 59, Issue 1,Pages <nobr>200

JOURNALS // Zhurnal Tekhnicheskoi Fiziki // Archive

Zhurnal Tekhnicheskoi Fiziki, 1989 Volume 59, Issue 1, Pages 200–202 (Mi jtf3195)

Brief Communications

FORMATION OF BETA-SI3N4 HIDDEN LAYER UNDER HIGHLY EFFICIENT ION IRRADIATION (HII) OF SILICONE

I. A. Bachilo, R. V. Gribkovskii, F. F. Komarov, V. A. Mironenko, A. P. Novikov

Fulltext: PDF file (392 kB)

Bibliographic databases: