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JOURNALS // Zhurnal Tekhnicheskoi Fiziki // Archive
Zhurnal Tekhnicheskoi Fiziki, 1991 Volume 61, Issue 1, Pages 195–197 (Mi jtf4143)
Brief Communications

INTERMEDIATE CRYSTALLIZATION OF ION-IMPLANTED (A-SI) SILICON DURING NANOSECOND LASER ANNEALING PROCESSES

G. D. Ivlev




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