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// Zhurnal Tekhnicheskoi Fiziki
// Archive
Zhurnal Tekhnicheskoi Fiziki,
1986
Volume 56,
Issue 11,
Pages
2245–2247
(Mi jtf462)
Brief Communications
CHARACTERISTICS OF ELECTROPHYSICAL AND STRUCTURAL-PROPERTIES OF INSULATING LAYERS IN THE GAAS-ALAS SYSTEM OBTAINED BY THE HYDRID MOS METHOD
E. A. Il'ichev
,
S. K. Maksimov
,
E. N. Nagdaev
,
É. A. Poltoratskiĭ
,
A. V. Rodionov
,
Yu. V. Slepnev
UDC:
637.311.33
Received:
24.09.1985
Revised:
02.12.1985
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Steklov Math. Inst. of RAS
, 2025