Residual stress in the carrier tape AISI 310S at the stage of deposition of the YSZ buffer layer when manufacturing of HTSC-2 wire

Using neutron diffraction we determined internal residual stress in the stainless steel AISI 310S carrier tape with a thickness of 100 $\mu$m and a width of 4 mm after mechanical polishing and the ABAD deposition of the textured YSZ buffer layer. It is shown that mechanical polishing causes a slight distension of the tape in the rolling plane. After the deposition of the YSZ layer, uniform tensile stress of 70 MPa isotropic in the rolling plane was observed inside the tape. Calculations have shown that it results from relaxation of compressive stress acting on the surface of the tape in a layer several times thicker than the YSZ layer. It is assumed that the surface of the tape is plastically deformed during the YSZ deposition.