D. V. Gulyaev, D. V. Dmitriev, N. V. Fateev, D. Yu. Protasov, A. S. Kozhukhov, K. S. Zhuravlev, “GaAs/AlGaAs- and InGaAs/AlGaAs heterostructures for high-power semiconductor infrared emitters”, Zhurnal Tekhnicheskoi Fiziki, 2021, Volume 91, Issue 11,Pages <nobr>1727

Solid-State Electronics

GaAs/AlGaAs- and InGaAs/AlGaAs heterostructures for high-power semiconductor infrared emitters

D. V. Gulyaev^a, D. V. Dmitriev^a, N. V. Fateev^a, D. Yu. Protasov^ab, A. S. Kozhukhov^a, K. S. Zhuravlev^a

^a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^b Novosibirsk State Technical University

Abstract: The internal quantum efficiency of GaAs/AlGaAs and InGaAs/AlGaAs heterostructures for infrared light emitter diodes has been determined. The influence of the growth conditions of heterostructures grown by the molecular beam epitaxy and post-growth annealing on the quantum efficiency of heterostructures has been investigated. It has been shown that it is possible to increase the quantum luminescence efficiency of the studied heterostructures up to 75–80% at the average power by the combined optimization of these processes.

Keywords: GaAs/AlGaAs and InGaAs/AlGaAs heterostructures, internal quantum exit, photoluminescence, molecular-beam epitaxy.

Received: 12.05.2021
Revised: 28.06.2021
Accepted: 01.07.2021

DOI: 10.21883/JTF.2021.11.51535.142-21