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Zhurnal Tekhnicheskoi Fiziki, 2021 Volume 91, Issue 10, Pages 1454–1465 (Mi jtf4913)

This article is cited in 4 papers

XXV International Symposium on Nanophysics and Nanoelectronics, Nizhny Novgorod, March 9--12, 2021
Solids

Peculiarities of deformation of round thin-film membranes and experimental determination of their effective characteristics

A. A. Dedkovaa, P. Y. Glagoleva, E. È. Guseva, N. A. Djuzheva, V. Yu. Kireeva, S. A. Lychevb, D. A. Tovarnova

a National Research University of Electronic Technology
b Ishlinsky Institute for Problems in Mechanics of the Russian Academy of Sciences, Moscow

Abstract: The features of thin-film membranes, which are formed above round holes in silicon substrates using the Bosch-process are considered. The membrane has a complex shape due to the presence of the stress state of the initial films. The analysis of the dependence of the membrane deflection w on the supplied overpressure $P$ is used to calculate the mechanical characteristics of the membranes. In this case, it is necessary to determine directly on the membrane its diameter, the thickness of the constituent layers, the change in the relief of the membrane surface over its entire area as the excess pressure $P$. Determination of the membrane diameter and the thicknesses of the constituent layers is shown by the example of $p$-Si$^{*}$/SiN$_{x}$/SiO$_{2}$- and SiN$_{x}$/SiÎ$_{2}$/SiN$_{x}$/SiÎ$_{2}$ membranes. We used spectral ellipsometry, energy-dispersive X-ray spectroscopy, optical profilometry, optical microscopy. The influence of the peculiarities of the fixing conditions on the stress-strain state of membranes is shown, and the assessment is carried out by means of numerical modeling. A technique has been developed for measuring and calculating the mechanical characteristics of membranes that have an initial deflection. The calculation result is shown on the example of a membrane with an initial deflection of 2 $\mu$m – SiN$_{x}$/SiÎ$_{2}$/SiN$_{x}$/SiÎ$_{2}$ and a membrane with an initial deflection of 30 $\mu$m – Al/SiO$_2$/Al.

Keywords: stress, bulging method, films, thin-layer coating, film thickness, membrane, pressure blister test, residual stress, microelectromechanical systems, MEMS, silicon substrate, large deformations, strain, deflections, circular membrane, bulge testing.

Received: 26.04.2021
Revised: 26.04.2021
Accepted: 26.04.2021

DOI: 10.21883/JTF.2021.10.51357.121-21



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