L. A. Fomin, I. V. Malikov, V. A. Berezin, A. È. Rassadin, A. B. Loginov, B. A. Loginov, “Comparison of STM and AFM measurements of Mo thin films with the Kardar–Parisi–Zhang model”, Zhurnal Tekhnicheskoi Fiziki, 2021, Volume 91, Issue 10,Pages <nobr>1466

This article is cited in 1 paper

XXV International Symposium on Nanophysics and Nanoelectronics, Nizhny Novgorod, March 9--12, 2021
Solids

Comparison of STM and AFM measurements of Mo thin films with the Kardar–Parisi–Zhang model

L. A. Fomin^a, I. V. Malikov^a, V. A. Berezin^a, A. È. Rassadin^b, A. B. Loginov^c, B. A. Loginov^d

^a Institute of Microelectronics Technology and High-Purity Materials RAS
^b State University – Higher School of Economics, Nizhny Novgorod Branch
^c Lomonosov Moscow State University
^d National Research University of Electronic Technology

Abstract: The relief of thin Mo epitaxial films grown on the $R$-plane of sapphire has been studied by scanning tunneling microscopy and atomic force microscopy. The region of parameters of the model of the evolution of the surface relief of the Kardar–Parisi–Zhang films is found, in which it corresponds to the obtained experimental results.

Keywords: epitaxial films, refractory metals, rough surface, Oleinik – Lax maximum principle, Cole – Hopf transformation.

Received: 29.04.2021
Revised: 29.04.2021
Accepted: 29.04.2021

DOI: 10.21883/JTF.2021.10.51358.130-21