D. A. Antonov, D. O. Filatov, A. S. Novikov, A. V. Kruglov, I. N. Antonov, A. V. Zdoroveyshchev, O. N. Gorshkov, “Resistive switching in individual ferromagnetic filaments in ZrO<nobr>$_{2}$</nobr>(Y)/Ni based memristive stacks”, Zhurnal Tekhnicheskoi Fiziki, 2021, Volume 91, Issue 10,Pages <nobr>1474

XXV International Symposium on Nanophysics and Nanoelectronics, Nizhny Novgorod, March 9--12, 2021
Solids

Resistive switching in individual ferromagnetic filaments in ZrO$_{2}$(Y)/Ni based memristive stacks

D. A. Antonov^a, D. O. Filatov^a, A. S. Novikov^a, A. V. Kruglov^a, I. N. Antonov^a, A. V. Zdoroveyshchev^b, O. N. Gorshkov^a

^a National Research Lobachevsky State University of Nizhny Novgorod
^b Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod

Abstract: The resistive switching effect in individual ferromagnetic filaments in memristive stacks based on ZrO$_{2}$(Y)/Ni functional layers was studied experimentally. A conductive probe of an atomic force microscope played a role of a movable top electrode of a virtual memristive stack. The features of bipolar-type resistive switching found were related to the rapture and restoring of the filaments containing Ni atoms in the ZrO$_2$(Y) dielectric films and are probably caused by different degree of metallization of the filaments. The filaments fromed were manifested in the images obtained by magnetic force microscopy as single-domain ferromagnetic particles.

Keywords: memristor, resistive switching, atomic force microscopy, ferromagnetic filaments.

Received: 12.04.2021
Revised: 12.04.2021
Accepted: 12.04.2021

DOI: 10.21883/JTF.2021.10.51359.105-21