Application of cerium oxide nanopowders for silicon polishing

The research methods and the first results obtained in the study of the roughness of single-crystal silicon (111) substrates processed at the final stage by various methods are described: traditional polishing without the use of chemical-mechanical polishing (CMP), with the use of CMP and without CMP, but with the use of oxide cerium nanopowders. The efficiency of using CeO$_{2}$ nanopowders has been demonstrated. The following effective roughness values were obtained: without CMP – 3.56 nm, with CMP – 0.54 nm, and without CMP, but with CeO$_{2}$ polishing – 0.93 nm.