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Zhurnal Tekhnicheskoi Fiziki, 2021 Volume 91, Issue 9, Pages 1409–1414 (Mi jtf4945)

Solid-State Electronics

Methods for switching radiation polarization in GaAs laser diodes

M. V. Dorokhin, B. N. Zvonkov, P. B. Demina, N. V. Dikareva, A. V. Zdoroveyshchev, A. V. Kudrin, O. V. Vikhrova, I. V. Samartsev, S. M. Nekorkin

National Research Lobachevsky State University of Nizhny Novgorod

Abstract: Operation modes of laser structures with controlled polarization of light have been studied and the results of measuring polarization characteristics are presented. The possibility of controlling both the linear and circular polarizations of light with corresponding modification of the laser design is shown. In particular, stable lasing at two orthogonally polarized modes in the near-IR range with the intensity ratio of radiation components $I_{\mathrm{TE}}/I_{\mathrm{TM}}\approx$ 4.5 is implemented. The possibility is confirmed of generation of circularly polarized radiation in edge-emitting laser diodes by magnetization of a combined semitransparent mirror with a ferromagnetic CoPt layer deposited on the end face of the laser cavity. The degree of polarization is $\pm$1.25% in the CoPt layer saturation magnetization mode.

Keywords: semiconductors, laser diode, quantum well, polarization.

Received: 16.02.2021
Revised: 22.04.2021
Accepted: 28.04.2021

DOI: 10.21883/JTF.2021.09.51221.39-21


 English version:
Technical Physics, 2021, 66:11, 1194–1199

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