D. V. Ishchenko, A. N. Akimov, I. O. Akhundov, V. A. Golyashov, A. E. Klimov, A. B. Loginov, B. A. Loginov, N. S. Pschin, A. S. Tarasov, E. V. Fedosenko, V. N. Sherstyakova, “Topology of PbSnTe:In layers versus indium concentration”, Zhurnal Tekhnicheskoi Fiziki, 2021, Volume 91, Issue 6,Pages <nobr>1040

Physical electronics

Topology of PbSnTe:In layers versus indium concentration

D. V. Ishchenko^a, A. N. Akimov^a, I. O. Akhundov^a, V. A. Golyashov^ab, A. E. Klimov^ac, A. B. Loginov^d, B. A. Loginov^e, N. S. Pschin^a, A. S. Tarasov^a, E. V. Fedosenko^a, V. N. Sherstyakova^a

^a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^b Novosibirsk State University
^c Novosibirsk State Technical University
^d Lomonosov Moscow State University
^e National Research University of Electronic Technology

Abstract: The surface topology of epitaxial films of lead tin telluride solid solution (including with In additive, Pb$_{1-x}$Sn$_{x}$Te:In) has been examined using atomic force microscopy. The films have been grown on BaF$_2$(111) single-crystal substrates and on a CaF$_2$/BaF$_2$ buffer layer covering a Si(111) wafer. It has been shown that the relief statistical parameters depend on film growth conditions and the incorporation mechanism of indium, an excess amount of which has been detected on the surface by ex situ XPS.

Keywords: Topological insulator, surfacem solid solution, A$^{\mathrm{IV}}$B$^{\mathrm{VI}}$, lead tin telluride.

Received: 27.11.2020
Revised: 19.01.2021
Accepted: 21.01.2021

DOI: 10.21883/JTF.2021.06.50876.326-20