Dispersion of plasma oscillations in amorphous chalcogenide semiconductors

Using the method of plasma oscillation dispersion, thin films of amorphous chalcogenide semiconductors have been investigated and the asymmetry in the number of electrons in the region of X-ray total external reflection and plasmon excitation has been calculated. Loop-shaped dispersion curves have been observed, and the mean energies of plasmons, together with plasmon-related internal stresses and film polarization, have been determined. It has been found that internal stresses and polarization in a molybdenum sulfide amorphous film are absent.