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Zhurnal Tekhnicheskoi Fiziki, 2021 Volume 91, Issue 5, Pages 821–826 (Mi jtf5019)

This article is cited in 3 papers

Solid-State Electronics

Temperature dependence of the sensitivity of silicon photomultipliers in the regime of single-photon detection of ultraviolet radiation

A. A. Bogdanov, Yu. V. Tuboltsev, Yu. V. Chichagov, E. E. Kholupenko, A. M. Krassilchtchikov

Ioffe Institute, St. Petersburg

Abstract: The temperature dependences of the dark count and efficiency of single-photon detection for two silicon avalanche photodetectors of ultraviolet radiation (OnSemi/SensL MicroFJ-60035 and Hamamatsu VUV4 S13371-6050CQ-02) operating at a wavelength of 277 nm are studied experimentally in the context of development of a new recording camera for the TAIGA-IACT gamma-telescope. It is shown that the main characteristics of these detectors correspond to the manufacturer certification. The signal readout systems have been developed and tested. It is concluded that such detectors are applicable in recording cameras of Cherenkov gamma telescopes.

Keywords: SiPM, silicon photomultipliers, PDE, dark count, ultraviolet, TAIGA-IACT, front-end electronics.

Received: 15.09.2020
Revised: 18.11.2020
Accepted: 18.11.2020

DOI: 10.21883/JTF.2021.05.50695.270-20


 English version:
Technical Physics, 2021, 66:5, 699–704

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© Steklov Math. Inst. of RAS, 2024