Low-frequency noise in light-emitting diodes based on InGaN/GaN quantum wells under electric actions accompanied with an increase in the external quantum efficiency

The results of testing the degradation of light-emitting diode structures with InGaN/GaN quantum wells are reported. An increase in the external quantum efficiency as compared to the initial value is observed after the passage of current of 150–170 mA. Possible physical processes leading to a change in the quantum efficiency and an increase in low-frequency noise are considered.