A. G. Gladyshev, A. V. Babichev, V. V. Andryushkin, D. V. Denisov, V. N. Nevedomskiy, E. S. Kolodeznyi, I. I. Novikov, L. Ya. Karachinsky, A. Yu. Egorov, “Studying the optical and structural properties of three-dimensional InGaP(As) islands formed by substitution of elements of the fifth group”, Zhurnal Tekhnicheskoi Fiziki, 2020, Volume 90, Issue 12,Pages <nobr>2139

This article is cited in 1 paper

Physics of nanostructures

Studying the optical and structural properties of three-dimensional InGaP(As) islands formed by substitution of elements of the fifth group

A. G. Gladyshev^a, A. V. Babichev^a, V. V. Andryushkin^a, D. V. Denisov^b, V. N. Nevedomskiy^c, E. S. Kolodeznyi^a, I. I. Novikov^a, L. Ya. Karachinsky^a, A. Yu. Egorov^d

^a St. Petersburg National Research University of Information Technologies, Mechanics and Optics
^b Saint Petersburg Electrotechnical University "LETI"
^c Center for Collective Use "Materials Science and Diagnostics in Advanced Technologies", St. Petersburg
^d Connector Optics LLC, St. Petersburg

Abstract: A new method for the formation of three-dimensional quantum-dimensional InGaP(As) islands is proposed, which consists in replacing phosphorus with arsenic in an InGaP layer deposited on GaAs directly during epitaxial growth. It is shown that the replacement of phosphorus with arsenic results in formation of three-dimensional islands in the thin InGaP layer. At room temperature, these islands emit light in the spectral range of 0.95 – 0.97 $\mu$m. The estimated density of the islands is 1.3 $\times$ 10$^{10}$ cm$^{-2}$.

Received: 13.04.2020
Revised: 12.05.2020
Accepted: 13.05.2020

DOI: 10.21883/JTF.2020.12.50133.129-20