B. A. Gurovich, K. E. Prikhod'ko, B. V. Goncharov, M. M. Dementyeva, L. V. Kutuzov, D. A. Komarov, A. G. Domantovskii, V. L. Stolyarov, E. D. Ol'shanskii, “The influence of integrated resistors formed under ion irradiation on the superconducting transitions of niobium nitride nanoconductors”, Zhurnal Tekhnicheskoi Fiziki, 2020, Volume 90, Issue 11,Pages <nobr>1860

This article is cited in 1 paper

XXIV International Symposium Nanophysics and Nanoelectronics, Nizhny Novgorod, March 10--13, 2020
Physics of nanostructures

The influence of integrated resistors formed under ion irradiation on the superconducting transitions of niobium nitride nanoconductors

B. A. Gurovich^a, K. E. Prikhod'ko^ab, B. V. Goncharov^a, M. M. Dementyeva^a, L. V. Kutuzov^a, D. A. Komarov^a, A. G. Domantovskii^a, V. L. Stolyarov^a, E. D. Ol'shanskii^a

^a National Research Centre "Kurchatov Institute", Moscow
^b National Engineering Physics Institute "MEPhI", Moscow

Abstract: The influence of integrated resistors formed under irradiation in a nanowire on its superconducting transitions has been investigated. Niobium nitride nanowires with widths of 75–20 000 nm fabricated from a 5-nm-thick NbN film on single-crystal silicon substrates coated with a 0.3-$\mu$m-thick thermal silicon oxide layer and on sapphire substrates have been considered. The influence of a built-in resistive region on the critical current of transition from the superconducting to normal state is described.

Received: 01.04.2020
Revised: 01.04.2020
Accepted: 01.04.2020

DOI: 10.21883/JTF.2020.11.49975.106-20