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Zhurnal Tekhnicheskoi Fiziki, 2020 Volume 90, Issue 10, Pages 1764–1768 (Mi jtf5192)

Solid-State Electronics

Laser power converter modules with a wavelength of 809–850 nm

V. P. Khvostikov, N. A. Kalyuzhnyy, S. A. Mintairov, N. S. Potapovich, O. A. Khvostikova, S. V. Sorokina, M. Z. Shvarts

Ioffe Institute, St. Petersburg

Abstract: We consider a high-efficiency photovoltaic module optimized for conversion of monochromatic radiation with a wavelength of 809–850 nm. The module includes four photovoltaic converters with a total area of 16 cm$^2$, which operate with laser radiation of a power higher than 1 W and ensure a working voltage higher than 4 V. In the development and obtaining AlGaAs/GaAs structures for receiver-converters of radiation, we have used the method of epitaxy from the liquid phase and the method of metalorganic vapour-phase epitaxy. When the photovoltaic module operates in the regime of uniform irradiation of the light-detecting surface, the efficiency of conversion of a high-power (6.2 W) laser radiation exceeds 60%.

Keywords: photovoltaic converter, laser radiation, AlGaAs/GaAs, module, epitaxy.

Received: 04.02.2020
Revised: 17.03.2020
Accepted: 18.04.2020

DOI: 10.21883/JTF.2020.10.49811.43-20


 English version:
Technical Physics, 2020, 65:10, 1690–1694

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