Quantum yield of a silicon avalanche photodiode in the wavelength range of 120–170 nm

We have designed a silicon avalanche photodiode for detecting vacuum ultraviolet radiation. The external quantum yield of a silicon avalanche photodiode has been investigated in the wavelength range of 120–170 nm. It is shown that the avalanche photodiode has an external quantum yield of 24–150 electrons/photons at a reverse bias voltage of 230–345 V. Testing of this avalanche photodiode with pulsed illumination at wavelengths of 280 and 340 nm has shown performance corresponding to a transmission band no narrower than 25 MHz.