Magnetoelastic properties of yttrium–iron garnet films manufactured by means of ion-beam sputtering onto Si and GaAs substrates

The effect is studied of tensile deformations on the spectrum of the ferromagnetic resonance of submicron yttrium–iron garnet polycrystalline films manufactured by means of ion-beam sputtering onto silicon and gallium arsenide substrates. Magnetoelastic constants of films on both substrates, the values of which did not exceed 16% of that of the bulk polycrystalline garnet, were calculated from the magnitude of the frequency shift of the absorption maximum in the ferromagnetic resonance spectrum. An approach is proposed to increase the efficiency of electrical frequency tuning in composite multiferroid structures by means of combining static and dynamic (caused by piezoelectric effect) tensile deformations.