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Zhurnal Tekhnicheskoi Fiziki, 2020 Volume 90, Issue 3, Pages 456–461 (Mi jtf5363)

This article is cited in 1 paper

Solid-State Electronics

LED structures based on ZnO films obtained by RF magnetron sputtering for the UV spectral range

M. M. Mezdroginaa, A. Ya. Vinogradova, Yu. V. Kozhanovab, E. A. Borsuka

a Ioffe Institute, St. Petersburg
b Peter the Great St. Petersburg Polytechnic University

Abstract: Data for the influence of different defects on the photoluminescence and electroluminescence spectra (emission intensity and wavelength) of $n$-ZnO/$p$-GaN structures are reported.

Keywords: ZnO films, $p$-GaN, photoluminescence spectra in UF area.

Received: 24.10.2018
Revised: 11.01.2019
Accepted: 30.09.2019

DOI: 10.21883/JTF.2020.03.48931.378-18


 English version:
Technical Physics, 2020, 65:3, 434–439

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© Steklov Math. Inst. of RAS, 2024