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Zhurnal Tekhnicheskoi Fiziki, 2020 Volume 90, Issue 1, Pages 155–160 (Mi jtf5423)

This article is cited in 3 papers

Physical electronics

Ranges of hydrogen, deuterium, and helium atoms in amorphous silicon and tungsten

D. S. Meluzova, P. Yu. Babenko, A. P. Shergin, A. N. Zinov'ev

Ioffe Institute, St. Petersburg

Abstract: We have obtained the range distributions for H, D, and He atoms within an energy range of 0.1–100 keV in amorphous W and Si for the normal incidence of bombarding particles. Calculations have been performed both in the binary collision approximation and by a more accurate method of calculating particle trajectories. It is shown that the results of both methods are in good agreement with each other and with experimental data on the mean ranges for the H–Si system. The influence of the attracting well in the particle–solid interaction potential on the results of calculations is estimated.

Received: 09.03.2019
Revised: 07.06.2019
Accepted: 29.06.2019

DOI: 10.21883/JTF.2020.01.48678.89-19


 English version:
Technical Physics, 2020, 65:1, 145–150

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© Steklov Math. Inst. of RAS, 2024