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Zhurnal Tekhnicheskoi Fiziki, 2019 Volume 89, Issue 12, Pages 1940–1946 (Mi jtf5443)

This article is cited in 2 papers

Physics of nanostructures

Investigation of the hydrogen etching effect of the SiC surface on the formation of graphene films

S. P. Lebedeva, I. S. Barasha, I. A. Eliseyeva, P. A. Dementeva, A. A. Lebedevab, P. V. Bulatc

a Ioffe Institute, St. Petersburg
b Saint Petersburg Electrotechnical University "LETI"
c St. Petersburg National Research University of Information Technologies, Mechanics and Optics

Abstract: We have studied the effect of temperature and etching duration of the 4$H$-SiC (0001) surface in hydrogen on the structural perfection of graphene films grown by thermal destruction. Several technological modes have been identified that enable etching of the substrate without changing the stoichiometric composition of the surface. It has been demonstrated that pregrowth etching in hydrogen at $T$ = 1600$^\circ$C with a duration of 1 min makes it possible to obtain a more uniform and structurally perfect graphene than etching at $T$ = 1300$^\circ$C with a 30 min duration.

Keywords: graphene, silicon carbide, raman spectroscopy, atomic force microscopy.

Received: 25.05.2019
Revised: 25.05.2019
Accepted: 10.06.2019

DOI: 10.21883/JTF.2019.12.48495.217-19


 English version:
Technical Physics, 2019, 64:12, 1843–1849

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