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Zhurnal Tekhnicheskoi Fiziki, 2019 Volume 89, Issue 12, Pages 1971–1977 (Mi jtf5446)

This article is cited in 7 papers

Physical electronics

Impact of a dopant impurity electronic structure on physical properties, defect structure, and features of lithium niobate doping technology

O. V. Makarova, M. N. Palatnikov, I. V. Biryukova, N. V. Sidorov

Institute of Chemistry and Technology of Rare Elements and Mineral Raw Materials Kola Science Centre of the Russian Academy of Sciences, Apatity, Russia

Abstract: The macro- and microstructure of doped LiNbO$_{3}$ crystals is studied, their transmission spectra are investigated, and the effective coefficients characterizing the dopant impurity distribution are determined. We analyze the literature data on phase diagrams of the ternary system Li$_{2}$O–Nb$_{2}$O$_{5}$–dopant oxide and the electron configurations of dopant elements, and the results suggest that this can be used as a basis for designing technological conditions for growing doped lithium niobate crystals and predicting their quality. With $p$-elements (boron), structurally and compositionally uniform LiNbO$_{3}$ crystals can be grown, with the doping impurity not being incorporated in the crystal. $s$- and $d$-metals (magnesium and zinc) have a similar effect on the melt and properties of resulting LiNbO$_{3}$ crystals, which have periodic domain structures and similar types of point defects. Due to their electronic structure, $f$-metals (cerium) bring the melt to such a structure that this enables the formation of a periodic domain structure in LiNbO$_{3}$ crystals during their growth.

Keywords: crystal, lithium niobate, doping, optical microscopy.

Received: 09.06.2018
Revised: 25.12.2018
Accepted: 10.04.2019

DOI: 10.21883/JTF.2019.12.48498.230-18


 English version:
Technical Physics, 2019, 64:12, 1872–1878

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