Atomic-force microscopy of resistive nonstationary signal switching in ZrO$_{2}$(Y) films

The features of resistive switching in the yttria stabilized zirconia films on the conductive substrates by triangle pulses with superimposed high-frequency sinusoidal signal has been studied using Conductive Atomic Force Microscopy. The improvement of the ratio of the values of the electric current through the contact of the probe to the surface of the dielectric film in the low resistant state and in the high resistant one as well as of the long-time scale stability of the values of the electric current through the contact in the respective states when applying the sinusoidal sighnal as compared to the switching by the triangle pulses has been observed. The effect was attributed to the resonant activation of the oxygen ion migration via the oxygen vacancies by the alternating external electric field.