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Zhurnal Tekhnicheskoi Fiziki, 2019 Volume 89, Issue 11, Pages 1692–1698 (Mi jtf5460)

This article is cited in 4 papers

XXIII International Symposium on Nanophysics and Nanoelectronics, Nizhny Novgorod, March 11-14, 2019

Application of scanning capacitance force microscopy for detecting impurity phases in ferroelectric triglycine sulfate

R. V. Gainutdinova, A. L. Tolstikhinaa, A. K. Lashkovaa, N. V. Beluginaa, V. N. Shutb, S. E. Mozzharovb, I. F. Kashevichbc

a Shubnikov Institute of Crystallography, Federal Scientific Research Centre Crystallography and Photonics, Russian Academy of Sciences, Moscow, Russia
b Institute of Technical Acoustics, Academy of Sciences of Belarus, Vitebsk
c Vitebsk State University named after P. M. Masherov

Abstract: An inhomogeneous ferroelectric (triglycine-sulfate (TGS) single crystal with a TGS–TGS+Cr periodic growth impurity structure) has been investigated by scanning capacitance force microscopy (SCFM). The specific features of mapping capacitance variations when detecting the electrostatic force at double and triple resonance frequencies are considered. The piezoelectric response, surface potential, and surface topography have been measured. It is shown that the capacitance contrast is formed both on domain walls and on TGS and TGS+Cr stripes. It is demonstrated that SCFM at the electrostatic-force double resonance frequency makes it possible to observe the spatial impurity distribution in the ferroelectric structure in the range of Cr concentrations of about 0.02–0.08 wt %.

Keywords: triglycine sulfate, scanning capacitance force microscopy, profile impurity distribution.

Received: 28.03.2019

DOI: 10.21883/JTF.2019.11.48330.119-19


 English version:
Technical Physics, 2019, 64:11, 1602–1608

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