R. V. Levin, B. V. Pushnii, I. V. Fedorov, A. A. Usikova, V. N. Nevedomskiy, N. L. Bazhenov, K. J. Mynbaev, N. V. Pavlov, G. G. Zegrya, “Examination of the capabilities of metalorganic vapor-phase epitaxy in fabrication of thin InAs/GaSb layers”, Zhurnal Tekhnicheskoi Fiziki, 2019, Volume 89, Issue 10,Pages <nobr>1592

This article is cited in 1 paper

Physics of nanostructures

Examination of the capabilities of metalorganic vapor-phase epitaxy in fabrication of thin InAs/GaSb layers

R. V. Levin^a, B. V. Pushnii^a, I. V. Fedorov^ab, A. A. Usikova^a, V. N. Nevedomskiy^a, N. L. Bazhenov^a, K. J. Mynbaev^ab, N. V. Pavlov^a, G. G. Zegrya^a

^a Ioffe Institute, St. Petersburg
^b St. Petersburg National Research University of Information Technologies, Mechanics and Optics

Abstract: The capabilities of metalorganic vapor-phase epitaxy (MOVPE) in fabrication of structures with thin (1–2 nm) alternating InAs/GaSb layers on a GaSb substrate are studied. The characteristics of these structures were examined using transmission electron microscopy and methods of photo- and electroluminescence. It was found that two GaInAsSb solid solutions of different compositions were formed in the active regions of structures in the given growth conditions. The fabricated system was characterized by an emission wavelength of 4.96 $\mu$m at a temperature of 77 K. The results reveal new opportunities for bandgap engineering of semiconductor structures based on InAs/GaSb, which are designed for optoelectronic devices operating in the infrared range, provided by MOVPE.

Keywords: narrow-gap semiconductors, strained superlattice, MOCVD, electroluminescence.

Received: 29.11.2018
Revised: 29.11.2018
Accepted: 10.04.2019

DOI: 10.21883/JTF.2019.10.48178.412-18