Variation of the crystal structure on Si(111) surface induced by ion bombardment and subsequent annealing

Modification of Si(111) surface due to ion bombardment and subsequent annealing has been studied. It has been found that annealing following bombardment with 0.3- to 1.0-keV ions causes a multilayer metal silicide coating to form on the surface. It has also been established that work function $\varphi$ of Si(111) variously depends on dose at different energies of types of ions.