Comparative characteristic analysis of thermophotovoltaic $p$-InAsSbP/$n$-InAs converters irradiated on $p$- and $n$-sides

The basic characteristics of thermophotovoltaic heterostructure $p$-InAsSbP/$n$-InAs converters have been simulated. The converters have been designed so that a contact to the irradiated $p$-InAsSbP layer has a limited area or, in the flip-chip design, radiation is introduced through a contact-free part of the $n^+$-InAs substrate. It has been shown that the design features of the converter influence its efficiency and active region temperature.