M. A. Putyato, N. A. Valisheva, M. O. Petrushkov, V. V. Preobrazhenskii, I. B. Chistokhin, B. R. Semyagin, E. A. Emelyanov, A. V. Vasev, A. F. Skachkov, G. I. Yurko, I. I. Nesterenko, “A lightweight flexible solar cell based on a heteroepitaxial InGaP/GaAs structure”, Zhurnal Tekhnicheskoi Fiziki, 2019, Volume 89, Issue 7,Pages <nobr>1071

This article is cited in 4 papers

Solid-State Electronics

A lightweight flexible solar cell based on a heteroepitaxial InGaP/GaAs structure

M. A. Putyato^a, N. A. Valisheva^a, M. O. Petrushkov^a, V. V. Preobrazhenskii^a, I. B. Chistokhin^a, B. R. Semyagin^a, E. A. Emelyanov^a, A. V. Vasev^a, A. F. Skachkov^b, G. I. Yurko^b, I. I. Nesterenko^b

^a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^b PAO Saturn, Krasnodar, Russia

Abstract: Problems arising in fabrication of lightweight flexible solar cells based on heteroepitaxial A$^{\mathrm{III}}$B$^{\mathrm{V}}$ structures with substrate etching are discussed. Possible solutions are proposed. A tandem lightweight flexible solar cell based on a heteroepitaxial InGaP/GaAs structure was fabricated. Its mass and dimensional characteristics were determined, and bending tests were performed. The specific mass of this solar cell was 0.51 kg/m$^2$, and the allowable bend radius was 36 mm. Its current–voltage curves were measured for the AM0 and AM1.5D spectra at 28.6$^\circ$C and 25$^\circ$C, respectively. The cell efficiency was found to be 23.1% and 28.3%.

Received: 27.12.2018
Revised: 27.12.2018
Accepted: 07.02.2019

DOI: 10.21883/JTF.2019.07.47802.438-18