X-ray diagnostics of microstructure defects of silicon crystals irradiated by hydrogen ions

Features of formation and transformation of radiation defects in near-surface layers of silicon plates that are implanted with hydrogen ions are studied. Using the method of high-resolution double-crystal X-ray diffractometry, values of the main parameters, such as mean effective thickness $L_{\operatorname{eff}}$ and mean relative deformation $\Delta a/a$ of a doped layer, are determined depending on the implantation dose and substrate temperature.