B. E. Umirzakov, D. A. Tashmukhamedova, A. K. Tashatov, N. M. Mustafoeva, “Electronic and optical properties of NiSi<nobr>$_{2}$</nobr>/Si nanofilms”, Zhurnal Tekhnicheskoi Fiziki, 2019, Volume 89, Issue 5,Pages <nobr>759

This article is cited in 2 papers

Physical electronics

Electronic and optical properties of NiSi$_{2}$/Si nanofilms

B. E. Umirzakov, D. A. Tashmukhamedova, A. K. Tashatov, N. M. Mustafoeva

Tashkent State Technical University

Abstract: Optimum conditions for ion implantation and subsequent annealing for the fabrication of NiSi$_2$/Si (111) nanofilms with a thickness of 3.0 – 6.0 nm are determined. It is demonstrated that the energy-band parameters and optical properties typical of thick NiSi$_2$ films start to set in at $d$ = 5.0 – 6.0 nm.

Received: 16.05.2018
Revised: 02.10.2018
Accepted: 14.11.2018

DOI: 10.21883/JTF.2019.05.47481.192-18