A. G. Kyazim-zade, V. M. Salmanov, A. H. Huseynov, R. M. Mamedov, Z. A. Aghamaliyev, A. A. Salmanova, F. M. Akhmedova, “Conductivity inversion in thin <nobr>$n$</nobr>-InSe films under laser irradiation”, Zhurnal Tekhnicheskoi Fiziki, 2019, Volume 89, Issue 4,Pages <nobr>599

Solid-State Electronics

Conductivity inversion in thin $n$-InSe films under laser irradiation

A. G. Kyazim-zade^a, V. M. Salmanov^a, A. H. Huseynov^a, R. M. Mamedov^a, Z. A. Aghamaliyev^a, A. A. Salmanova^b, F. M. Akhmedova^a

^a Baku State University
^b Azerbaijan State University of Oil and Industry, Baku

Abstract: Conductivity inversion in thin $n$-InSe films under intense pulsed laser irradiation was obser. A $p$–$n$ structure based on indium selenide formed between irradiated and nonirradiated regions of a thin-film sample. It was confirmed by EDAX analysis that the composition of the sample remained the same after irradiation. The conductivity inversion is attributed to a change in the dynamics of lattice defects under heating.

Received: 14.03.2018
Revised: 10.05.2018

DOI: 10.21883/JTF.2019.04.47319.110-18