Silicon with magnetic nanoclusters of manganese atoms as a new ferromagnetic material

Photosensitivity of the negative magnetoresistance (NMR) of silicon containing magnetic nanoclusters of manganese atoms is revealed under background and IR (up to $\lambda$ = 3 $\mu$m) irradiation at room temperature. It is shown that irradiation leads to a significant decrease in the NMR (NMR suppression) and sign inversion of the NMR at higher radiation intensities. Regularities of variations in the NMR and conditions for sign inversion are determined.