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JOURNALS // Zhurnal Tekhnicheskoi Fiziki // Archive

Zhurnal Tekhnicheskoi Fiziki, 2019 Volume 89, Issue 2, Pages 264–267 (Mi jtf5700)

This article is cited in 4 papers

Solid-State Electronics

The morphology and electronic properties of si nanoscale structures on a CaF$_{2}$ surface

B. E. Umirzakov, R. Kh. Ashurov, S. B. Donaev

Tashkent State Technical University named after Islam Karimov

Abstract: The surface morphology, crystal structures, and band-energy parameters have been studied for nanofilms and regularly arranged nanoscale Si phases with a thickness of 1–2 nm. The bandgap thickness of nanocrystalline Si phases with 2 – 3 single layers is found to be $\sim$1.4 eV.

Received: 13.05.2018

DOI: 10.21883/JTF.2019.02.47081.185-18


 English version:
Technical Physics, 2019, 64:2, 232–235

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© Steklov Math. Inst. of RAS, 2024