In situ modification and analysis of the composition and crystal structure of a silicon target by ion-beam methods

The method of Rutherford backscattering (RBS) with channeling is widely used in compositional analysis and structural determination. An experimental process line for in situ ion implantation and RBS spectrometry is presented, and its technical parameters are given. The parameters of a probing beam needed to reach a several-percent error in the study of distribution profiles of impurities and defects are detailed. The resolution of this method was estimated using the spectrum of alpha particles produced in the decay of $^{239}$Pu and based on the RBS spectrum from a silicon monocrystal. The implantation of Xe$^+$ ions with an energy of 100 keV into a silicon monocrystal and the RBS analysis of targets in the channeling mode were performed without breach of vacuum conditions. The distribution profiles of implanted atoms and defects in irradiated monocrystals were examined.