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Zhurnal Tekhnicheskoi Fiziki, 2018 Volume 88, Issue 10, Pages 1544–1550 (Mi jtf5798)

This article is cited in 1 paper

Solid-State Electronics

Theoretical analysis of the effect of $dU/dt$ in 4H–SiC thyristor structures

S. N. Yurkov, T. T. Ìnatsakanov, A. G. Tandoev

Moscow Power Engineering Institute, Moscow, Russia

Abstract: On the basis of numerical simulation, specificities of the effect of $dU/dt$ in 4H–SiC thyristor structures, related to realization of the recently discovered triggering $\alpha$-mechanism are analyzed. It is shown that one of the manifestations of this mechanism is a catastrophic reduction in the voltage blocked by a thyristor with an increase in temperature of the structure. Practical ways of eliminating this effect are discussed.

Keywords: Thyristor Structure, Ohmic Leakage, Pulse Front Duration, Critical Charge, Technological Shunts.

Received: 24.10.2017
Revised: 26.03.2018

DOI: 10.21883/JTF.2018.10.46499.2529


 English version:
Technical Physics, 2018, 63:10, 1497–1503

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