Properties of ZnSe/Al$_2$O$_3$ nanostructures obtained by RF magnetron sputtering

Experimental data for the synthesis of ZnSe/Al$_2$O$_3$ nanostructures utilizing a technology widely used in integrated circuit (IC) production are reported. It has been shown that the refractive index and size of the coherent scattering domains grow, whereas the energy bandgap decreases, with an increase in ZnSe width. It has been supposed that samples with a ZnSe width of 9 $\mathring{\mathrm{A}}$ contain a ZnSeO$_3$ compound and/or ZnSe $\cdot$ Al$_2$O$_3$ complex compound. Multilayer heterostructures with a ZnSe width more than 9 $\mathring{\mathrm{A}}$ contain cubic ZnSe nanocrystallites.