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Zhurnal Tekhnicheskoi Fiziki, 2018 Volume 88, Issue 10, Pages 1573–1580 (Mi jtf5803)

This article is cited in 2 papers

Physical electronics

Atomic layer deposition of thin films onto 3$D$ nanostructures: the effect of wall tilt angle and aspect ratio of trenches

A. V. Fadeev, K. V. Rudenko

Insitute of Physics and Technology, Institution of Russian Academy of Sciences, Moscow

Abstract: A theoretical model predicting the spatial profile of a film grown on walls by atomic layer deposition (ALD) is developed. The possible initial nonverticality of trench walls and the dynamic variation of the aspect ratio of the structure in the process of film growth in nanosized trenches are considered in this model. The dependence of the resulting film thickness and conformity on ALD process parameters is studied theoretically.

Keywords: Atomic Layer Deposition (ALD), Tilt Walls, Trench Wall, Initial Tilt Angle, Particle Reflection.

Received: 10.11.2017

DOI: 10.21883/JTF.2018.10.46504.2550


 English version:
Technical Physics, 2018, 63:10, 1525–1532

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