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Zhurnal Tekhnicheskoi Fiziki, 2018 Volume 88, Issue 8, Pages 1211–1215 (Mi jtf5843)

This article is cited in 5 papers

Solid-State Electronics

Influence of the ohmic contact structure on the performance of GaAs/AlGaAs photovoltaic converters

A. V. Malevskaya, V. S. Kalinovskii, N. D. Il'inskaya, D. A. Malevskii, E. V. Kontrosh, M. Z. Shvarts, V. M. Andreev

Ioffe Institute, St. Petersburg

Abstract: A multilayer system of ohmic contacts for GaAs/AlGaAs photovoltaic converters has been developed. A method of ohmic contact blackening is suggested with the aim of improving the coefficient of optical signal reflection from an Ag/Au/Ag multilayer contact. Owing to blackening, the reflection coefficient has been decreased more than tenfold.

Received: 08.12.2017

DOI: 10.21883/JTF.2018.08.46311.2591


 English version:
Technical Physics, 2018, 63:8, 1177–1181

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© Steklov Math. Inst. of RAS, 2024