V. A. Smirnov, R. V. Tominov, N. I. Alyab’eva, M. V. Il'ina, V. V. Polyakova, Al. V. Bykov, O. A. Ageev, “Atomic force microscopy measurement of the resistivity of semiconductors”, Zhurnal Tekhnicheskoi Fiziki, 2018, Volume 88, Issue 8,Pages <nobr>1273

This article is cited in 11 papers

Experimental instruments and technique

Atomic force microscopy measurement of the resistivity of semiconductors

V. A. Smirnov^a, R. V. Tominov^a, N. I. Alyab’eva^b, M. V. Il'ina^a, V. V. Polyakova^a, Al. V. Bykov^a, O. A. Ageev^a

^a Institute of Nanotechnologies, Electronics, and Equipment Engineering, Southern Federal University, Taganrog, Russia
^b University of Paris-Sud, Orsay cedex, France

Abstract: The surface of silicon substrates has been studied experimentally and theoretically by the method of atomic force microscopy spreading resistance imaging, and measuring techniques for the spreading resistance of semiconductors have been developed based on these data. It has been shown that the resistivity of silicon can be determined reliably if the force with which the probe is pressed against the substrate exceeds some threshold. The influence of the environment on the values of currents in the probe–substrate system has been studied. It has been found that the electrical performance of semiconductors can be properly determined by atomic force microscopy spreading resistance imaging under high-vacuum conditions.

Received: 24.05.2017

DOI: 10.21883/JTF.2018.08.46320.2351