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Zhurnal Tekhnicheskoi Fiziki, 2018 Volume 88, Issue 7, Pages 1057–1059 (Mi jtf5870)

This article is cited in 1 paper

Solid-State Electronics

Stratification of Bi$_{0.5}$Sb$_{1.5}$Te$_{3}$ single crystals and sintering of the obtained micro- and nanoscale plates

N. S. Petrovaab, V. A. Danilova, Yu. A. Boikova, V. S. Kuznetsovaab, S. V. Novikova

a Ioffe Institute, St. Petersburg
b Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg

Abstract: The use of surface active liquids facilitates intense stratification of mechanically strained Bi$_{0.5}$Sb$_{1.5}$Te$_{3}$ crystallites. A Bi$_{0.5}$Sb$_{1.5}$Te$_{3}$ heat element with specified thickness and structure is formed by layer-by-layer deposition of “thermoelectric ink” on its free surface. A heat treatment of the formed thermoelectric element in argon at a temperature of 800 K makes it possible to minimize radically the resistance of the grain boundaries introduced into its bulk.

Received: 12.12.2017

DOI: 10.21883/JTF.2018.07.46177.2593


 English version:
Technical Physics, 2018, 63:7, 1026–1028

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