Combined technology fabrication of spin-valve magnetoresistive elements and micromagnets

We present the research results of the fabrication technology of magnetoresistive (MR) elements based on the multilayer spin-valve magnetoresistive (SVMR) Ta–FeNiCo–CoFe–Cu–CoFe–FeNiCo–FeMn–Та nanostructures and CoNi micromagnets for the construction of digital galvanic interchanges and the magnetic field sensors. The results of experimental studies of test elements based on multilayer SVMR nanostructures with an MR effect from 7 to 8% and films of magnetically hard materials with a coercive force of up to 95 Oe formed on a single silicon die are presented.