A. E. Dubinov, I. N. Kitayev, “Extension of the Mott–Gurney law for a bilayer gap”, Zhurnal Tekhnicheskoi Fiziki, 2018, Volume 88, Issue 4,Pages <nobr>483

This article is cited in 2 papers

Theoretical and Mathematical Physics

Extension of the Mott–Gurney law for a bilayer gap

A. E. Dubinov^abc, I. N. Kitayev^abc

^a Federal State Unitary Enterprise "Russian Federal Nuclear Center — All-Russian Research Institute of Experimental Physics", Sarov, Nizhny Novgorod region
^b National Engineering Physics Institute "MEPhI", Moscow
^c Russian Federal Nuclear Center, All-Russia Research Institute of Experimental Physics, Sarov, Nizhny Novgorod oblast, Russia

Abstract: Steady drift states of an electron flow in a planar gap filled with a bilayer dielectric have been considered. Exact mathematical formulas have been derived that describe the distributions of the electrostatic potential and space charge limited electron flow current (extended Mott–Gurney law for a bilayer diode).

Received: 15.02.2017
Revised: 17.10.2017

DOI: 10.21883/JTF.2018.04.45713.2209