P. B. Boldyrevskii, D. O. Filatov, I. A. Kazantseva, M. V. Revin, D. S. Smotrin, P. A. Yunin, “Influence of the rotation frequency of a disk substrate holder on the crystal structure characteristics of MOCVD-grown GaAs layers”, Zhurnal Tekhnicheskoi Fiziki, 2018, Volume 88, Issue 2,Pages <nobr>219

This article is cited in 1 paper

Physical science of materials

Influence of the rotation frequency of a disk substrate holder on the crystal structure characteristics of MOCVD-grown GaAs layers

P. B. Boldyrevskii^a, D. O. Filatov^a, I. A. Kazantseva^a, M. V. Revin^a, D. S. Smotrin^a, P. A. Yunin^b

^a Lobachevsky State University of Nizhny Novgorod
^b Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod

Abstract: The influence of the rotation frequency of a disk substrate holder on the growth mechanism and crystal structure characteristics of MOCVD-grown GaAs layers has been studied. In the frequency range of 0–400 rpm, variations have been observed in the growth mechanism and rate, as well as of crystal perfection.

Received: 24.06.2017

DOI: 10.21883/JTF.2018.02.45411.2405