N. D. Il'inskaya, S. A. Karandashov, A. A. Lavrov, B. A. Matveev, M. A. Remennyi, N. M. Stus, A. A. Usikova, “InAsSbP photodiodes for 2.6–2.8-<nobr>$\mu$</nobr>m wavelengths”, Zhurnal Tekhnicheskoi Fiziki, 2018, Volume 88, Issue 2,Pages <nobr>234

This article is cited in 7 papers

Solid-State Electronics

InAsSbP photodiodes for 2.6–2.8-$\mu$m wavelengths

N. D. Il'inskaya^a, S. A. Karandashov^a, A. A. Lavrov^ab, B. A. Matveev^a, M. A. Remennyi^a, N. M. Stus^ab, A. A. Usikova^a

^a Ioffe Institute, St. Petersburg
^b IoffeLED Ltd., St. Petersburg

Abstract: Research data for photovoltaic, I–V , and C–V characteristics of InAsSbP/InAs heterostructure photodiodes that operate at room temperature in the wavelength range 2.6–2.8 $\mu$m have been reported. Based on these data and available publications, conclusions have been drawn about the prospects for using these photodiodes in a number of applications.

Received: 01.06.2017

DOI: 10.21883/JTF.2018.02.45414.2371